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  • 权利要求
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    • 专利摘要:
    The present invention relates to a device for measuring heights and / or thicknesses on a measuring object (24) such as a wafer, comprising a low coherence interferometer arranged to combine in a spectrometer (18) a reference optical beam ( 17) and a measuring optical beam (16) from reflections of said light on interfaces of the measuring object (24), so as to produce a fluted spectrum signal (41) with spectral modulation frequencies, which device further comprising (i) means for measuring position information representative of said relative optical length, and (ii) electronic and computing means (20) arranged to determine at least one spectral modulation frequency representative of an optical path difference between the optical measuring beam (16) and the reference optical beam (17), and for determining, using said position information and said at least one a spectral modulation frequency, at least one height and / or a thickness on said measuring object (24). The invention also relates to a method implemented in this device.
    公开号:FR3045813A1
    申请号:FR1563128
    申请日:2015-12-22
    公开日:2017-06-23
    发明作者:Jean-Philippe Piel；Jeff Wuyu Su；Benoit Thouy
    申请人:Fogale Nanotech SA；
    IPC主号:
    专利说明:

    "Device and method for measuring height in the presence of thin layers"
    Technical area
    The present invention relates to a device and a method for measuring heights or thicknesses of samples such as wafers in the presence of thin layers.
    The field of the invention is more particularly, but not exclusively, that of optical measurement systems for the semiconductor industry.
    State of the art
    It is often necessary to measure height, shape or thickness on wafers during semiconductor component manufacturing processes. These measurements may relate, for example, to surface shapes or flatnesses, total thicknesses, or layer thicknesses.
    For this, it is known to use optical techniques, particularly low coherence interferometry techniques that implement broad-spectrum optical sources. These techniques are essentially of two kinds: - techniques with detection in the time domain; - techniques with detection in the spectral domain.
    Techniques with time domain detection use a time delay line that reproduces the propagation delays of the measurement waves reflected by the interfaces of the object to be measured and interferes with a reference wave. This results in a detector of peaks of interference representative of the position of the interfaces of the object. These temporal techniques make it possible to reach important measuring ranges limited only by the course of the delay line. By using a broad-spectrum source emitting in the infrared they make it possible to measure thicknesses of semiconductor materials such as silicon. The minimum measurable thicknesses are limited by the width of the interferogram envelope, which depends on the shape and width of the source spectrum.
    Thus, with a superluminescent diode emitting in the infrared (1310 nm or 1550 nm for example), it is possible to measure silicon thicknesses or transparent layers of the order of a few tens of microns to several millimeters.
    The techniques based on low coherence interferometry in the spectral domain are generally rather intended for measurements of thin layers, of the order of a few tens of nanometers to a few hundred microns. The light reflected by the interfaces of the object to be measured is analyzed in a spectrometer. The thicknesses or distances between the interfaces of the object at the origin of the reflections introduce modulations in the detected spectrum that make it possible to measure them.
    For example, document EP 0 747 666 describes a system based on low coherence interferometry in the spectral domain making it possible to measure distances between interfaces in the presence of thin layers, from a mathematical modeling of the phase of the ripples of the measured spectrum.
    In practice, the wafers whose thickness is to be measured may be covered with a thin layer of transparent material. There are, for example, configurations in which it is desired to measure the thickness of 300 μm to 700 μm thick silicon wafers covered with a layer of polyimide of the order of 10 μm thick. This configuration is problematic because none of the techniques mentioned above makes it possible to measure the total thickness satisfactorily: - Low coherence interferometry techniques with detection in the time domain (and an infrared source) make it possible to measure the thickness silicon, but they do not distinguish the interfaces of the polyimide thin layer, too close to the width of the interferograms. Even if we do not want to know the thickness of the thin layer it causes an uncertainty of measurement of the order of its thickness; - Low coherence interferometry techniques with detection in the spectral range make it possible to measure the thickness of the thin layer, but their extent of measurement is too limited to measure the thickness of silicon.
    The object of the present invention is to propose a device and a method which makes it possible to measure the heights of objects such as wafers in the presence of thin layers.
    The present invention also aims to provide a device and a method that allows to measure thicknesses of objects such as wafers in the presence of thin layers.
    The present invention also aims to provide a device and a method that allows to measure heights or thicknesses of objects such as wafers in the presence of thin layers without degradation of the measurement accuracy.
    Another object of the present invention is to provide a device and a method which makes it possible to measure heights or thicknesses of objects such as wafers, with both a large extent of measurement and a resolution making it possible to measure thin layers.
    Presentation of the invention
    This objective is achieved with a device for measuring heights and / or thicknesses on a measurement object such as a wafer, comprising a low coherence interferometer illuminated by a polychromatic light and arranged to combine in a spectrometer a reference optical beam. derived from a reflection of said light on a reference surface and an optical measurement beam from reflections of said light on the interfaces of the measurement object, so as to produce a fluted spectrum signal with spectral modulation frequencies , characterized in that it further comprises: - displacement means for varying the relative optical length of the measuring and reference optical beams, and means for measuring a position information representative of said relative optical length, and electronic and computing means arranged to determine at least one spectral modulation frequency detecting an optical path difference between the optical measuring beam and the reference optical beam, and for determining, by using said position information and said at least one spectral modulation frequency, at least one height and / or one thickness on said measurement object.
    The displacement means for varying the relative optical length of the measuring and reference optical beams (or in other words the difference in optical length of the measurement and reference optical beams) may comprise, for example, a mechanical translation device enabling moving: - the reference surface relative to a beam splitter element of the interferometer, so as to vary the length of the reference optical beam; the whole of the interferometer relative to the object to be measured, or the object relative to the interferometer, so as to vary the length of the optical measuring beam.
    The means for measuring a position information may comprise any means, such as an optical ruler or a laser range finder, for measuring the position of the moving element.
    The polychromatic light may comprise a spectrum extending in visible wavelengths and / or infrared wavelengths.
    The spectrum signal is said to be "fluted" when the relative optical length difference of the measurement and reference optical beams is large enough to be able to identify at least one spectral modulation period in the spectrum signal (ie over the width spectral signal). Of course, the spectrum signal may also comprise modulations with a period greater than the spectral width of the spectrum signal, corresponding to very thin layers.
    According to embodiments, the device according to the invention may comprise a measurement head with the reference surface, and translational displacement means able to relatively move said measuring head and the measurement object in a substantially parallel direction. to an optical axis of the optical measuring beam.
    In this case, the displacement means make it possible to vary the optical length of the measuring beam relative to the reference beam.
    According to embodiments, the device according to the invention may comprise a reference surface in the form of a semi-reflecting plate inserted in the path of the optical measuring beam.
    According to other embodiments, the device according to the invention may comprise a measuring head with a separating optical element capable of generating a measurement optical beam and a separate reference optical beam.
    The device according to the invention may in particular comprise a measurement head with an interferometer of one of the following types: Mirau, Linnick, Michelson, to generate the measurement and reference optical beams.
    A Mirau interferometer comprises a separating optical element with a semi-reflecting plate perpendicular to the axis of the incident beam and a reference surface in the form of a mirror inserted in the center of the incident beam.
    A Michelson interferometer or a Linnick interferometer comprises a separating optical element with a semi-reflective plate or a splitter cube arranged to generate a substantially perpendicular measuring beam and a reference beam, and a reference surface in the form of a mirror inserted into the reference beam.
    A Linnick interferometer further includes lenses or lenses inserted into the arms of the interferometer corresponding to the reference beam and the measurement beam.
    The device according to the invention may further comprise second translation means able to relatively move the optical measuring beam and the measurement object in a plane substantially perpendicular to an optical axis of the measuring beam.
    These second translation means make it possible to move the optical measuring beam on the surface of the object (or vice versa) so as to be able to measure heights and / or thicknesses at different points of this object.
    The device according to the invention may further comprise a support adapted to receive the measurement object, and a reference object with known height and / or thicknesses arranged on or forming part of said support.
    The support may be for example a wafer chuck, to receive a measuring object in the form of a wafer. The reference object may be for example a wafer portion of known characteristics placed on or secured to the support. It may also consist of a portion of the support or chuck height calibrated. The reference object may also be constituted by a bearing surface of the support intended to receive the object to be measured, or a coplanar surface of this bearing face. The reference object makes it possible to calibrate the measurement system, by taking measurements of known heights and / or thicknesses on its surface.
    According to embodiments, the device according to the invention may further comprise second optical distance measuring means and / or thickness with a second measurement beam incident on the object to be measured according to a second face to the opposite of the measuring beam.
    This configuration makes it possible to make caliper measurements, for example to carry out measurements of total thickness on the measurement object. These measurements of total thickness can in particular be deduced from measurements of distances made on either side of the measurement object.
    The second optical means for measuring distance and / or thickness can also be calibrated by taking measurements on the reference object.
    According to other embodiments, the device according to the invention may further comprise second mechanical distance measuring means with a mechanical probe in contact with a second face of the object to be measured opposite the measurement beam. .
    According to embodiments, the device according to the invention may comprise second optical distance measuring means and / or thickness of one of the following types: - interferometer with low coherence in the spectral range, - low interferometer coherence in the time domain, - confocal chromatic system.
    In the case of a low coherence interferometer in the spectral domain, it may be identical or different from the first interferometer. It can also implement a light with visible wavelengths and / or infrared.
    A chromatic confocal system is a measurement system that uses a dispersive optical element to focus different wavelengths at different distances, and a spectral detection to identify the reflected wavelengths and thus the position of the interfaces at the origin of these reflections.
    In another aspect, there is provided a method for measuring heights and / or thicknesses on a measuring object such as a wafer, using a low coherence interferometer illuminated by a polychromatic light and arranged to combine in a spectrometer. a reference optical beam originating from a reflection of said light on a reference surface and a measurement optical beam originating from reflections of said light on the interfaces of the measurement object, so as to produce a grooved spectrum signal with spectral modulation frequencies, which method comprises steps of: - measuring a position information representative of the relative optical length of the measurement and reference optical beams, - determining at least one spectral modulation frequency representative of an optical path difference between the optical measuring beam and the reference optical beam, rmination, by exploiting said position information and said at least one spectral modulation frequency, of at least one height and / or a thickness on said measurement object.
    The method according to the invention may further comprise a step of identifying the spectral modulation frequencies, the value of which varies with a variation of the relative optical length of the measurement and reference optical beams.
    The method according to the invention may further comprise a step of varying the relative optical length of the measurement and reference optical beams so as to obtain at least one spectral modulation frequency in a predetermined range of values.
    According to embodiments, the method according to the invention may further comprise steps of: - calculating a spectral modulation signal representative of the amplitude of the Fourier transform of the fluted spectrum signal, - identification amplitude peaks representative of spectral modulation frequencies in said spectral modulation signal.
    According to embodiments, the method according to the invention may further comprise a calibration step comprising a measurement of height and / or thickness on a reference object of known height and / or thickness, so that establishing a relationship between at least one position information of the reference surface, at least one spectral modulation frequency, and at least one height and / or one thickness.
    According to embodiments, the method according to the invention may further comprise a step of measuring a second information of height and / or thicknesses by using second optical means for measuring distance and / or thickness with a second measuring beam incident on the object to be measured in a second face opposite the measuring beam, so as to determine a thickness information of said object to be measured.
    According to a particularly advantageous aspect, the measurement method according to the invention implements a low coherence interferometer with spectral mode detection in a configuration that makes it possible to perform absolute distance measurements over large measurement ranges. It is thus possible to exploit an advantage of this type of spectral detection which is to make it possible to distinguish very close interfaces, and to obtain a device and a method for measuring distances and / or thicknesses which combines a large extent of measurement and a resolution. (or an ability to distinguish nearby interfaces) equally important.
    For this purpose: the relative optical length difference of the measurement and reference optical beams is adjusted by moving in a known manner an element of the interferometer (or the measurement object) so that the corresponding spectral modulation frequency of the signal of fluted spectrum in a range of values where it can be measured under good conditions; This displacement information of an interferometer element is used as well as the spectral modulation frequency or frequencies measured to calculate an absolute height of the measurement object. the measurement is calibrated on a reference object of known height to establish a relationship between the displacement information of an element of the interferometer and the absolute height;
    To measure an object thickness, another measurement is made on the opposite face of the object, with a similar or different device, optical or even mechanical (touch probe).
    DESCRIPTION OF THE FIGURES AND EMBODIMENTS Other advantages and particularities of the invention will appear on reading the detailed description of implementations and non-limitative embodiments, and the following appended drawings: FIG. 1 illustrates an embodiment of the device according to the invention; FIG. 2 illustrates an embodiment of the interferometer in the form of a Michelson interferometer; FIG. 3 illustrates an embodiment of the interferometer in the form of a Mirau interferometer; FIG. 4 illustrates, (a) a fluted spectrum signal, and (b) a Fourier transform of the fluted spectrum, - FIG. 5 illustrates the steps of the method according to the invention.
    It is understood that the embodiments which will be described in the following are in no way limiting. It will be possible, in particular, to imagine variants of the invention comprising only a selection of characteristics described subsequently isolated from the other characteristics described, if this selection of characteristics is sufficient to confer a technical advantage or to differentiate the invention with respect to the state of the art. This selection comprises at least one feature preferably functional without structural details, or with only a part of the structural details if this part alone is sufficient to confer a technical advantage or to differentiate the invention from the state of the prior art.
    In particular, all the variants and all the embodiments described are combinable with each other if nothing stands in the way of this combination at the technical level.
    In the figures, the elements common to several figures retain the same reference.
    A first device embodiment according to the invention for measuring heights or thicknesses of measurement objects 24 will be described with reference to FIG.
    In the embodiment shown, the device according to the invention is more particularly intended to measure measuring objects 24 in the form of wafers 24 during the process.
    As illustrated, these wafers 24 may comprise one or more thin layers deposited on their surface.
    These wafers 24 may for example comprise a thickness of silicon of 450 .mu.m to 700 .mu.m and a layer of polyimide, silicon oxide, silicon nitride or other dielectrics transparent from a few tens of nanometers to a few microns.
    Usually, these thin layers are at least partially transparent at visible wavelengths. Silicon is transparent to infrared wavelengths. However, according to the samples, the silicon layer may comprise opaque layers (component, transistors, layers or metal tracks, etc.).
    Under these conditions, as previously explained, the known methods for measuring the total thickness of the wafer are generally not able to separate or solve the interfaces of the thin layers, especially when they are transparent in the measurement wavelengths. Even if we do not try to measure the thickness of these layers but only the total thickness of the wafer 24, the accuracy of the measurement is limited by the indeterminacy on the detection of the interfaces of the thin layers 25. At the Conversely, these thin layers can be measured or their interfaces distinguished with low coherence interferometry techniques operating in the spectral domain, using a light source with a spectrum sufficiently extended in frequencies. However, these techniques do not make it possible to measure significant optical thicknesses (such as 700 μm of silicon, which correspond to an optical thickness greater than 2 mm, taking into account the refractive index of silicon, which is of the order of 3.5). In this case the oscillations of the fluted spectrum become too close together to be sampled by the detector.
    In addition, the wafers 24 to be measured can be highly deformed, which requires a measurement system with a large extent of measurement.
    The heart of the measuring device according to the invention consists of a low coherence interferometer integrated in a measuring head 10.
    The measuring head 10 is fixed to displacement means 21 with a motorized translation stage which makes it possible to move it along an axis Z relative to the frame of the apparatus on which this translation stage is fixed. The translation stage is equipped with means for measuring a position information in the form of an optical ruler, which makes it possible to measure precisely its displacement and its position. The interferometer is illuminated by a broad-spectrum optical source which emits a polychromatic light 12 into the visible spectrum. In the embodiment shown, this source comprises a halogen source, or deuterium halogen with a spectrum extending up to 300 nm in the ultraviolet. The interferometer comprises a separating plate 13 which directs the light from the source 11 towards the object to be measured 24.
    Part of the light is reflected on a reference surface 14 constituted by a semi-reflecting plate 14, to form a reference optical beam 17.
    Part of the light of the source is transmitted through the semi-reflecting plate 14 to form a measuring optical beam 16. This optical measuring beam 16 is focused on the object to be measured 24 (the wafer 24) by an objective or a lens 15.
    The optical measuring beam 16 is positioned relative to the measuring object 24 so that its optical axis 19 is substantially perpendicular to the interfaces of this object 24. In the embodiment presented, this optical axis 19 is substantially parallel to the displacement Z of the displacement means 21.
    The light of the measuring beam 16 is reflected on the interfaces of the object to be measured 24, and in particular in the example illustrated by the interfaces of the thin layer 25.
    The reflected measurement 16 and reference 17 beams are directed through the separator plate 13 to a detection spectrometer 18.
    This spectrometer 18 comprises a diffractive grating which disperses spatially as a function of optical frequencies the combined light of the measurement beams 16 and reference 17, and a linear sensor (CCD or CMOS) from which each pixel receives light from the diffractive grating corresponding to a particular range of optical frequencies.
    The spectrometer is connected to electronic and computing means 20 in the form of a computer 20. The object to be measured 24, which is in the illustrated embodiment a wafer 24, is positioned on a support 23, which has the form of a wafer support 23 ("chuck" in English).
    The device further comprises a reference object 26 in the form of a wafer portion 26 of known thickness. This reference object 26 is positioned on a wafer support 23.
    The wafer support 23 is fixed on second translation means 22 in the form of a translation plate 22 which ensures its displacement (relative to the frame of the apparatus for example) in an XY plane substantially perpendicular to the optical axis 19 of the measuring beam 16.
    These second translation means 22 make it possible to position the measuring beam 16 at any point on the surface of the wafer 24, and on the reference object 26.
    The device according to the invention further comprises second optical distance measuring means and / or thickness 27 with a second measuring beam 28 incident on the object to be measured 24 in a second face opposite the beam of measure 16.
    In the embodiment shown, these second optical measuring means 27 comprise a low-coherence interferometer operating in the time domain, with a time delay line which makes it possible to introduce a delay or a variable optical path variation.
    Such interferometers are known to those skilled in the art, so only the general principles are recalled here.
    Light from a broad-spectrum source is separated between an internal reference beam and a measurement beam 28 incident on the object to be measured. The measuring beam 28 is reflected on the interfaces of the object. Each reflection is delayed proportionally to the optical path to the interface considered. This delay is reproduced in the delay line so as to re-phase the measurement and reference beams and thus generate interference peaks during the displacement of the delay line. The knowledge of the displacement of this delay line makes it possible to determine the position of the interfaces at the origin of the interference peaks.
    It is preferable to use an infrared light source (around 1310 nm for example), which makes it possible to penetrate the silicon and thus also to measure on wafer internal layers where appropriate. The use of two measurement beams 16, 28 on either side of the object to be measured 24 in a "stirrup" configuration makes it possible to measure thicknesses on this object 24 by measuring the distances of its faces on both sides of the measuring systems. It is thus possible to determine the thickness of the object 24 in all cases, whether it is transparent, opaque, or partially opaque to the measurement wavelengths used.
    Of course, the second translation means 22 also make it possible to position the second measurement beam 28 at any point on the second surface of the wafer 24, and on a second face of the reference object 26 opposite the first beam of measure 16.
    Figs. 2 and FIG. 3 illustrate variants of embodiments of the interferometer which have the advantage of spatially separating measurement beams 16 and reference 17. These configurations make it possible in particular to increase the working distance between the interferometer and the object to be measure 24 without increasing the optical path difference between the measurement beams 16 and reference 17.
    Fig. Figure 2 illustrates a Michelson interferometer configuration. The light of the source is divided by a splitter cube 31 to form a measuring beam 16 directed towards the object 24 and a reference beam 17 directed towards a reference surface in the form of a mirror 14. The measuring beams and reference are substantially perpendicular.
    Fig. Figure 3 illustrates a Mirau interferometer configuration. The light of the source is divided by a semi-reflecting plate 32 substantially perpendicular to the optical axis 19 of the incident beam to form a measurement beam 16 directed towards the object 24 and a reference beam 17 directed towards a reference surface under In this case, the reference mirror 14 is on the optical axis 19 of the incident beam, of which it forms a central obscuration.
    Fig. 4 (a) illustrates a splined spectrum signal 41 as obtained at the output of the spectrometer 18.
    This signal represents a spectral intensity I (v) expressed as a function of the optical frequency v. This intensity I (v) can be represented as a sum of i harmonic functions each corresponding to an interference signal between two incident waves on the spectrometer 18: I (v) ~ A0 (v) + Zi {Aj (v) COS [(2n / c) 2Lj v + q> j]> where A0 and Aj are intensity coefficients, tpi is a phase coefficient, c is the speed of light, and 2 Lj is the optical path difference between the two waves which interfere.
    The "frequency" of spectral modulation of each of these harmonic functions (which in fact has a time dimension and corresponds to the delay between the two waves which interfere) can be written as: T = (2Lj / c).
    This "frequency" of spectral modulation is therefore representative of the difference in optical paths 2Lj between the two waves that interfere.
    To analyze the spectral intensity signal I (v), perform a Fourier transform, and obtain an amplitude spectrum or spectral modulation signal 42 as shown in FIG. 4 (b). It should be noted that this spectral modulation signal 42 is representative of an envelope of the time autocorrelation function of the measurement beams 16 and reference 17. It comprises an amplitude peak 43, 44, 45 for each delay
    Tj corresponding to a difference in optical paths 2L, between two waves that interfere.
    The spectral modulation signal 42 illustrated in FIG. 4 (b) qualitatively corresponds to the situation illustrated in FIG. 1 in which there is a measuring object 24 with a thin layer 25.
    Of course, the signals shown in FIGS. 4 (a) and FIG. 4 (b) are purely illustrative.
    The spectral modulation signal 42 comprises a first peak 43 centered on a delay τ corresponding to the optical path difference 2E, where E is the optical thickness of the thin layer 25. This first peak 43 therefore corresponds to an interference between two components of the measuring beam 16 reflected on the two interfaces of the object 24 located on either side of the thin layer 25.
    It also comprises a second peak 44 and a third peak 45 respectively corresponding to interference between the reference beam 17 and the components of the measuring beam 16 reflected on the one and the other interfaces of the object 24 located on either side. else of the thin layer 25.
    Only these second and third peaks 44, 45 and the associated spectral modulation frequencies are representative of an optical path difference between the optical measurement beam 16 and the reference optical beam 17. And therefore only these second and third peaks 44, 45 contain absolute height information of the object.
    It is therefore necessary to perform a measurement of height on the object 24 to be able to discriminate the peaks 43 due solely to interference between components of the measuring beam 16 and the peaks of interest 44, 45 which are due to interference between the reference beam 17 and the measuring beam 16 and which alone contain the useful information.
    For this, the measuring head 10 is moved relative to the object to be measured 24 with the displacement means 21, which varies the optical path difference between the measuring beam 16 and reference beam 17. Only the peaks of interest 44, 45 due to interference between the reference beam 17 and the measuring beam 16 move in the measurement range, which makes it possible to distinguish them from the others which remain stationary.
    In addition, they can be positioned in a preferred area of the measuring range where they can be distinguished and measured under good conditions. For this, we set the peaks of interest 44, 45: - in the measurement range (in terms of delays τ or optical path differences 2L) exploitable. This measurement range extends from zero (zero delay) to delays for which the spectral modulation frequencies can no longer be sampled due to the spectral resolution of the spectrometer. preferably in a zone of the measuring range corresponding to delays τ or optical path differences 2L greater than those corresponding to the thickness of the thin layers 25 of the object 24.
    It should be noted that: the total measurement range is thus essentially determined by the travel of the displacement means 21, and the resolution, that is to say the ability to discriminate near interfaces is determined by the resolution spectral detection.
    As explained above, the interferometer makes it possible to determine differences in optical paths 2Lj between the reference beam and the measurement beam reflected by the interfaces of the object 24. It thus makes it possible to determine the optical heights Lj of these interfaces relative to each other. to an origin defined by an optical path equality in the interferometer. It is recalled that the optical distances or height correspond to the distances or geometric heights multiplied by the refractive index of the mediums traversed. In the embodiment of FIG. 1, these heights Lj correspond to the optical distance between the reference surface 14 and the interfaces of the object 24 along the Z axis.
    To calculate the optical height Hu1 of the interfaces of the object 24 with respect to an origin of a coordinate system (X, Y, Z) as illustrated in FIG. 1, it is necessary to take into account the position PH of the interferometer or the measurement head 10 along the axis Z. This position PH is given by the position measuring means of the translation stage 21, after calibration. Considering a position PH and Hui optical heights oriented along the Z axis, the optical height Hu 1 of the interfaces of the object 24 is given by the relation:
    Hui = PH - Lj.
    It is also possible to obtain optical height measurements H1j from the interfaces of the measuring object 24 according to its opposite face in a manner similar to the second optical measurement means 27. Preferably, these optical height measurements H1j are measured relative to to the same origin of the coordinate system (X, Y, Z).
    Optical thicknesses T of the object can then be determined by adding (or subtracting according to the sign conventions) the optical heights Hu and Hl obtained along the two faces of the object 24.
    With reference to FIG. 5, we will now describe a method of measuring distances and / or thickness that implements the device of the invention.
    To make a measurement: - the measurement beam is positioned on the surface of the object to be measured 24 by means of the second translation means 22 (step 50); the measurement head Z is moved relative to the object to be measured with the displacement means 21 to vary the optical path difference between the measurement and reference beams 17 (step 51); the peak or points of interest 44, 45 are identified as explained above and or positioned in a preferential zone of the measurement range (step 52); the difference (s) of the optical paths Lj corresponding to these peaks of interest 44, 45 are measured in the measurement range of the interferometer (with respect to the zero delay corresponding to an equality of optical paths of the measurement beams 16 and reference 17 (step 53): The optical height Hu 1 of the interfaces of the object 24 is calculated by taking into account the position PH of the interferometer as described previously (step 54): to calculate a thickness of the object, an optical height measurement H1j of the interfaces of the measuring object 24 is also performed along its opposite face with the second optical measurement means 27, and optical heights Hu and Hl are combined to determine the (optical) thickness T ( step 55).
    The measuring beams can then be moved to another point on the surface of the object 24 to make another measurement and thus to map or topology the object 24. The step 51 of moving the measuring head 10 can be omitted between the measurement points on the surface of the object if the identification of the peaks of interest is retained.
    The method according to the invention also comprises a calibration step 56 which makes it possible to determine the value of the position PH of the interferometer or of the measurement head 10 along the Z axis. For this, one or more measurements are carried out. on the reference object 26 whose height Hu is known, and the value of the position PH is deduced therefrom. It is also possible to calibrate in a similar way the second optical measuring means 27.
    This calibration procedure can be performed once before performing a set of measurements on the surface of an object 24.
    Of course, the invention is not limited to the examples that have just been described and many adjustments can be made to these examples without departing from the scope of the invention.
    权利要求:
    Claims (15)
    [1" id="c-fr-0001]
    A device for measuring heights and / or thicknesses on a measuring object (24) such as a wafer, comprising a low coherence interferometer illuminated by a polychromatic light (12) and arranged to combine in a spectrometer (18) a reference optical beam (17) issuing from a reflection of said light on a reference surface (14) and an optical measuring beam (16) originating from reflections of said light on interfaces of the measurement object (24); ), so as to produce a fluted spectrum signal (41) with spectral modulation frequencies, characterized in that it further comprises: - displacement means (21) for varying the relative optical length of the optical beams of measurement (16) and reference (17), and means for measuring a position information representative of said relative optical length, and - electronic and calculation means (20) arranged to determine at least one frequency of spectral modulation representative of an optical path difference between the optical measuring beam (16) and the reference optical beam (17), and for determining, by using said position information and said at least one spectral modulation frequency, to minus a height and / or a thickness on said measuring object (24).
    [2" id="c-fr-0002]
    2. The device of claim 1, which comprises a measuring head (10) with the reference surface (14), and translational displacement means (21) able to relatively move said measuring head (10) and measuring object (24) in a direction substantially parallel to an optical axis (19) of the optical measuring beam (16).
    [3" id="c-fr-0003]
    The device of claim 2 which comprises a reference surface (14) in the form of a semi-reflecting plate (14) inserted in the path of the optical measuring beam (16).
    [4" id="c-fr-0004]
    4. The device of claim 2, which comprises a measuring head (10) with a separating optical element (31, 32) capable of generating a measuring optical beam (16) and a reference optical beam (17) distinct.
    [5" id="c-fr-0005]
    5. The device of claim 4, which comprises a measuring head (10) with an interferometer of one of the following types: Mirau, Linnick, Michelson, for generating the measuring (16) and reference (17) optical beams. ).
    [6" id="c-fr-0006]
    6. The device of one of the preceding claims, which further comprises second translation means (22) able to relatively move the measuring optical beam (16) and the measuring object (24) in a substantially perpendicular plane. an optical axis (19) of the measuring beam (16).
    [7" id="c-fr-0007]
    7. The device of one of the preceding claims, which further comprises a support (23) adapted to receive the measurement object (24), and a reference object (26) with known height and / or thicknesses. disposed on or forming part of said support (23).
    [8" id="c-fr-0008]
    The device of one of the preceding claims, which further comprises second optical distance and / or thickness measuring means (27) with a second measuring beam (28) incident on the object to be measured ( 24) in a second face opposite the measuring beam (16).
    [9" id="c-fr-0009]
    9. The device of claim 8, which comprises second optical distance measuring means and / or thickness (27) of one of the following types: - interferometer with low coherence in the spectral range, - low interferometer coherence in the time domain, - confocal chromatic system.
    [10" id="c-fr-0010]
    A method for measuring heights and / or thicknesses on a measuring object (24) such as a wafer, using a low coherence interferometer illuminated by a polychromatic light (12) and arranged to combine in a spectrometer ( 18) a reference optical beam (17) resulting from a reflection of said light on a reference surface (14) and a measuring optical beam (16) resulting from reflections of said light on the measurement object's interfaces (24), so as to produce a fluted spectrum signal (41) with spectral modulation frequencies, characterized in that it comprises steps of: - measuring a position information representative of the relative optical length of the beams optical measuring (16) and reference (17), - determining at least one spectral modulation frequency representative of an optical path difference between the optical measuring beam (16) and the optical beam of reference (17); - determining, by using said position information and said at least one spectral modulation frequency, of at least one height and / or a thickness on said measurement object (24).
    [11" id="c-fr-0011]
    11. The method of claim 10, which comprises a step of identifying the spectral modulation frequencies whose value varies with a variation of the relative optical length of the measuring (16) and reference (17) optical beams.
    [12" id="c-fr-0012]
    The method of one of claims 10 or 11, which further comprises a step of varying the relative optical length of the measuring (16) and reference (17) optical beams so as to obtain at least one frequency of spectral modulation in a predetermined range of values.
    [13" id="c-fr-0013]
    The method of one of claims 10 to 12, which further comprises steps of: - calculating a spectral modulation signal (42) representative of the amplitude of the Fourier transform of the fluted spectrum signal ( 41), - identification of amplitude peaks (43, 44, 45) representative of spectral modulation frequencies in said spectral modulation signal (42).
    [14" id="c-fr-0014]
    The method of one of claims 10 to 13, which further comprises a calibration step comprising a measurement of height and / or thickness on a reference object (26) of known height and / or thickness. so as to establish a relationship between at least one position information of the reference surface (16), at least one spectral modulation frequency, and at least one height and / or one thickness.
    [0015]
    The method of one of claims 10 to 14 which further comprises a step of measuring a second height information and / or thicknesses using second optical distance and / or thickness measuring means. with a second measuring beam (28) incident on the object to be measured (24) in a second face opposite the measurement beam (16), so as to determine a thickness information of said object to be measured (24). ).
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    同族专利:
    公开号 | 公开日
    TW201728869A|2017-08-16|
    US20180364028A1|2018-12-20|
    EP3394560A1|2018-10-31|
    WO2017108400A1|2017-06-29|
    FR3045813B1|2020-05-01|
    KR20180098255A|2018-09-03|
    CN108431545A|2018-08-21|
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    法律状态:
    2016-12-15| PLFP| Fee payment|Year of fee payment: 2 |
    2017-06-23| PLSC| Publication of the preliminary search report|Effective date: 20170623 |
    2017-12-21| PLFP| Fee payment|Year of fee payment: 3 |
    2018-04-20| TP| Transmission of property|Owner name: UNITY SEMICONDUCTOR, FR Effective date: 20180316 |
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1563128|2015-12-22|
    FR1563128A|FR3045813B1|2015-12-22|2015-12-22|DEVICE AND METHOD FOR MEASURING HEIGHT IN THE PRESENCE OF THIN FILMS|FR1563128A| FR3045813B1|2015-12-22|2015-12-22|DEVICE AND METHOD FOR MEASURING HEIGHT IN THE PRESENCE OF THIN FILMS|
    US16/061,268| US20180364028A1|2015-12-22|2016-12-07|Device and method for measuring height in the presence of thin layers|
    PCT/EP2016/080005| WO2017108400A1|2015-12-22|2016-12-07|Device and method for measuring height in the presence of thin layers|
    CN201680074722.9A| CN108431545A|2015-12-22|2016-12-07|For measuring, there are the device and method of height when thin layer|
    KR1020187017326A| KR20180098255A|2015-12-22|2016-12-07|Apparatus and method for measuring height in the presence of a thin layer|
    EP16816597.5A| EP3394560A1|2015-12-22|2016-12-07|Device and method for measuring height in the presence of thin layers|
    TW105141398A| TW201728869A|2015-12-22|2016-12-14|Device and method for measuring height in the presence of thin layers|
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